Optical and Surface Characteristics of Mg-Doped GaAs Nanocrystalline Thin Film Deposited by Thermionic Vacuum Arc Technique

PAT S., Ozen S., ŞENAY V., KORKMAZ Ş.

JOURNAL OF ELECTRONIC MATERIALS, cilt.46, sa.1, ss.1-5, 2017 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 46 Sayı: 1
  • Basım Tarihi: 2017
  • Doi Numarası: 10.1007/s11664-016-4861-2
  • Dergi Adı: JOURNAL OF ELECTRONIC MATERIALS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.1-5
  • Eskişehir Osmangazi Üniversitesi Adresli: Evet

Özet

Magnesium (Mg) is the most promising p-type dopant for gallium arsenide (GaAs) semiconductor technology. Mg-doped GaAs nanocrystalline thin film has been deposited at room temperature by the thermionic vacuum arc technique, a rapid deposition method for production of doped GaAs material. The microstructure and surface and optical properties of the deposited sample were investigated by x-ray diffraction analysis, scanning electron microscopy, energy-dispersive x-ray spectroscopy, atomic force microscopy, ultraviolet-visible spectrophotometry, and interferometry. The crystalline direction of the deposited sample was determined to be (220) plane and (331) plane at 44.53 degrees and 72.30 degrees, respectively. The Mg-doped GaAs nanocrystalline sample showed high transmittance.