Synthesis and characterization of p-GaSe thin films and the analyses of I-V and C-V measurements of p-GaSe/p-Si heterojunction under electron irradiation

Demir K. C., AYDOĞAN Ş., GÜR E., Coskun C., Aygun Z.

RADIATION EFFECTS AND DEFECTS IN SOLIDS, cilt.172, sa.7-8, ss.650-663, 2017 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 172 Sayı: 7-8
  • Basım Tarihi: 2017
  • Doi Numarası: 10.1080/10420150.2017.1377713
  • Dergi Adı: RADIATION EFFECTS AND DEFECTS IN SOLIDS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.650-663
  • Anahtar Kelimeler: Irradiation, heterojunction, electrodeposition, GaSe, XRD, AFM, CURRENT-VOLTAGE CHARACTERISTICS, SCHOTTKY-BARRIER DIODES, HIGH SERIES RESISTANCE, PARAMETERS, TEMPERATURE, PERFORMANCE, DETECTORS, SILICON, HEIGHT, EPR
  • Eskişehir Osmangazi Üniversitesi Adresli: Hayır

Özet

Gallium Selenide (GaSe) thin films were grown by the electrochemical deposition (ECD) technique on Indium tin oxide (ITO) and p-Si (100) substrates. The Electron paramagnetic resonance (EPR) spectrum of GaSe thin films' growth on ITO was recorded at room temperature. According to EPR results, the g value of an EPR signal obtained for GaSe deposited on ITO is 2.0012 +/- 0.0005. In/GaSe/p-Si heterojunction was irradiated with high-energy (6MeV) and low-dose (1.53x10(10)e(-)cm(-2)) electrons. The ideality factor of the In/GaSe/p-Si device was calculated as 1.24 and barrier height was determined as 0.82eV from I-V measurements before irradiation. Acceptor concentration, built-in potential and barrier height of the In/GaSe/p-Si device were also obtained as 0.72x10(14)cm(-3), 0.65eV and 0.97eV from C-V measurements, respectively. After irradiation, the ideality factor n and barrier height phi(b) values of the In/GaSe/p-Si device were calculated as 1.55 and 0.781eV, respectively. Acceptor concentration, the built-in potential and barrier height values of the In/GaSe/p-Si device have also shown a decrease after 6MeV electron irradiation. This change in heterojunction device parameters shows that current transport does not obey thermionic emission, and thus tunneling could be active due to the defects formed by irradiation at the In-GaSe interface.