InN and In1-xGax N: calculation of hall mobilities and effects of alloy disorder and dislocation scatterings

Aydogu, Senem; Akarsu, MUSTAFA; Ozbas, Omer

doi:10.1016/j.mssp.2011.11.001

InN and In1-xGax N: calculation of hall mobilities and effects of alloy disorder and dislocation scatterings

Atıf İçin Kopyala

Aydogu S., Akarsu M., Ozbas O.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, cilt.15, sa.4, ss.347-352, 2012 (SCI-Expanded)

Yayın Türü: Makale / Tam Makale
Cilt numarası: 15 Sayı: 4
Basım Tarihi: 2012
Doi Numarası: 10.1016/j.mssp.2011.11.001
Dergi Adı: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
Sayfa Sayıları: ss.347-352
Eskişehir Osmangazi Üniversitesi Adresli: Evet

Özet

Hall mobilities of InN and In1-xGaxN are calculated by an iterative method. All important scattering mechanisms are taken into account in these calculations. The effect of dislocation scattering on Hall mobility of InN at a carrier concentration of 10(17) cm(-3) is investigated in the temperature range of 30-600 K. Hall mobility of InN decreased with increasing dislocation density. Both dislocation and alloy disorder scatterings dependence on mobility in In1-xGaxN are examined as x (composition) varies from 0.0 to 1.0 at 77K and 300K. We observed that the Hall mobility of In1-xGaxN decreases up to x=0.3 at 300 K and up to x=0.5 at 77K because of dislocation scattering. (C) 2011 Elsevier Ltd. All rights reserved.