Resistance Drift in Melt-Quenched Ge2Sb2Te5 Phase Change Memory Line Cells at Cryogenic Temperatures

Talukder, A.; Bin Kashem, Md; Khan, Raihan; DİRİSAĞLIK, FARUK; Gokirmak, Ali; Silva, Helena

doi:10.1149/2162-8777/ad2332

Resistance Drift in Melt-Quenched Ge2Sb2Te5 Phase Change Memory Line Cells at Cryogenic Temperatures

Atıf İçin Kopyala

Talukder A. B. M. H., Bin Kashem M. T., Khan R., DİRİSAĞLIK F., Gokirmak A., Silva H.

ECS Journal of Solid State Science and Technology, cilt.13, sa.2, 2024 (SCI-Expanded)

Yayın Türü: Makale / Tam Makale
Cilt numarası: 13 Sayı: 2
Basım Tarihi: 2024
Doi Numarası: 10.1149/2162-8777/ad2332
Dergi Adı: ECS Journal of Solid State Science and Technology
Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Chemical Abstracts Core, Compendex, INSPEC
Anahtar Kelimeler: cryogenic measurements, electron devices, Ge2Sb2Te5 line cells, melt-quench amorphization, resistance drift
Eskişehir Osmangazi Üniversitesi Adresli: Evet

Özet

Highlights Resistance drift measurements in a set of narrow and wider Ge2Sb2Te5 line cells at 80-300 K. Significant temporal and device-to-device variability in determination of resistance drift coefficients. Amorphization pulse characterization and correlation of amorphized length to the cell current during melt-quench process. Improved experimental setup for extremely low-leakage and fast measurements.