MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, vol.15, no.4, pp.347-352, 2012 (SCI-Expanded)
Hall mobilities of InN and In1-xGaxN are calculated by an iterative method. All important scattering mechanisms are taken into account in these calculations. The effect of dislocation scattering on Hall mobility of InN at a carrier concentration of 10(17) cm(-3) is investigated in the temperature range of 30-600 K. Hall mobility of InN decreased with increasing dislocation density. Both dislocation and alloy disorder scatterings dependence on mobility in In1-xGaxN are examined as x (composition) varies from 0.0 to 1.0 at 77K and 300K. We observed that the Hall mobility of In1-xGaxN decreases up to x=0.3 at 300 K and up to x=0.5 at 77K because of dislocation scattering. (C) 2011 Elsevier Ltd. All rights reserved.