Selection of an oxidant for copper CMP


ANIK M.

205th ECS Meeting, San Antonio, TX, United States Of America, 9 - 13 May 2004, pp.327-337 identifier

  • Publication Type: Conference Paper / Full Text
  • Volume:
  • City: San Antonio, TX
  • Country: United States Of America
  • Page Numbers: pp.327-337
  • Eskisehir Osmangazi University Affiliated: Yes

Abstract

The open circuit potential (OCP) of copper (Cu) was measured at various concentrations of IO3-, H2O2 and Fe3+ ion at pH 2 using the rotating disk electrode technique. H 2O2 was observed as very effective oxidant for Cu as compared to Fe3+ and IO3- ions at the OCP at pH 2. Both H2O2 and Fe3+ ion were found to reduce under total control of kinetics, whereas IO3- ion was observed to reduce under mixed control of kinetics and diffusion on the Cu surface at the OCP. The Cu polishing rate was estimated to be higher with the H2O2 based slurries as compared to the IO3 - and Fe3+ ion based slurries. Surface planarity, however, was estimated to be better with the Fe3+ ion based slurries as compared to the IO3- and H2O2 based slurries.