Öğr. Gör. Dr. FEYZA SÖNMEZ

Yayın Ağı

Makaleler 7

1. Design and realization of XOR, OR, and NAND light logic gates using GaAs heterostructure

Sonmez F., Ardali S., Arpapay B., Serincan U., Tiras E.

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING , cilt.131, sa.2, 2025 (SCI-Expanded, Scopus)

2. Light Logic Gates with GaAs-Based Structures

Sonmez F., Ardali S., Arpapay B., MUTLU S., Ergurhan A. A., Senel O., et al.

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS , cilt.18, sa.9, 2024 (SCI-Expanded, Scopus)

3. The comprehensive investigation of barrier layers on power loss mechanisms in AlGaN/GaN HEMT structures

Ardali S., Sonmez F., LİŞESİVDİN S. B., Malin T., Mansurov V., Zhuravlev K., et al.

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS , cilt.300, 2024 (SCI-Expanded, Scopus)

4. The investigation of photoluminescence properties in In_xGa_1-xN/GaN multiple quantum wells structures with varying well number

Sonmez F., Ardali S., Arpapay B., Tiras E.

PHYSICA B-CONDENSED MATTER , cilt.630, 2022 (SCI-Expanded, Scopus)

5. The effect of barrier layers on 2D electron effective mass in Al_0.3Ga_0.7N/AlN/GaN heterostructures

Sonmez F., Ardali S., LİŞESİVDİN S. B., Malin T., Mansurov V., Zhuravlev K., et al.

JOURNAL OF PHYSICS-CONDENSED MATTER , cilt.33, sa.25, 2021 (SCI-Expanded, Scopus)

6. Determination of scattering mechanisms in AlInGaN/GaN heterostructures grown on sapphire substrate

Sonmez F., Arslan E., Ardali S., Tiras E., Ozbay E.

JOURNAL OF ALLOYS AND COMPOUNDS , cilt.864, 2021 (SCI-Expanded, Scopus)

7. The effect of passivation layer, doping and spacer layer on electron-longitudinal optical phonon momentum relaxation time in Al_0.3Ga_0.7N/AlN/GaN heterostructures

Sonmez F., Ardali S., Atmaca G., LİŞESİVDİN S. B., Malin T., Mansurov V., et al.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , cilt.122, 2021 (SCI-Expanded, Scopus)

Metrikler

Öğr. Gör. Dr. FEYZA SÖNMEZ

Yayınlar & Eserler

1. Design and realization of XOR, OR, and NAND light logic gates using GaAs heterostructure

2. Light Logic Gates with GaAs-Based Structures

3. The comprehensive investigation of barrier layers on power loss mechanisms in AlGaN/GaN HEMT structures

4. The investigation of photoluminescence properties in In_xGa_1-xN/GaN multiple quantum wells structures with varying well number

5. The effect of barrier layers on 2D electron effective mass in Al_0.3Ga_0.7N/AlN/GaN heterostructures

6. Determination of scattering mechanisms in AlInGaN/GaN heterostructures grown on sapphire substrate

7. The effect of passivation layer, doping and spacer layer on electron-longitudinal optical phonon momentum relaxation time in Al_0.3Ga_0.7N/AlN/GaN heterostructures

Yayın

Yayın (WoS)

Yayın (Scopus)

Atıf (WoS)

H-İndeks (WoS)

Atıf (Scopus)

H-İndeks (Scopus)

Yayınlar & Eserler

1. Design and realization of XOR, OR, and NAND light logic gates using GaAs heterostructure

2. Light Logic Gates with GaAs-Based Structures

3. The comprehensive investigation of barrier layers on power loss mechanisms in AlGaN/GaN HEMT structures

4. The investigation of photoluminescence properties in InxGa1-xN/GaN multiple quantum wells structures with varying well number

5. The effect of barrier layers on 2D electron effective mass in Al0.3Ga0.7N/AlN/GaN heterostructures

6. Determination of scattering mechanisms in AlInGaN/GaN heterostructures grown on sapphire substrate

7. The effect of passivation layer, doping and spacer layer on electron-longitudinal optical phonon momentum relaxation time in Al0.3Ga0.7N/AlN/GaN heterostructures

Yayın

Yayın (WoS)

Yayın (Scopus)

Atıf (WoS)

H-İndeks (WoS)

Atıf (Scopus)

H-İndeks (Scopus)

4. The investigation of photoluminescence properties in In_xGa_1-xN/GaN multiple quantum wells structures with varying well number

5. The effect of barrier layers on 2D electron effective mass in Al_0.3Ga_0.7N/AlN/GaN heterostructures

7. The effect of passivation layer, doping and spacer layer on electron-longitudinal optical phonon momentum relaxation time in Al_0.3Ga_0.7N/AlN/GaN heterostructures